- Title
- 3-D Self-aligned Stacked Ge Nanowires Complementary FET Featuring Single Gate S imple Process
- Creators - without role
- 永俊 吳
- Publication Details
- IEEE Electron Device Letters
- Identifiers
- 9957772520206774
- Academic Unit
- Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
- Language
- English
- Resource Type
- Journal article
Journal article
3-D Self-aligned Stacked Ge Nanowires Complementary FET Featuring Single Gate S imple Process
IEEE Electron Device Letters
2024
Related links
Metrics
1 Record Views