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6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack
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6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack

Yun-Hsiang Wang, Yung C. Liang, Ganesh S. Samudra, Huolin Huang, Bo-Jhang Huang, Szu-Han Huang, Ting-Fu Chang, Chih-Fang Huang, Wei-Hung Kuo 和 Guo-Qiang Lo
IEEE Electron Device Letters, 卷.36(4), 頁碼.381-383
04/2015
DOI: https://doi.org/10.1109/LED.2015.2401736

摘要

AlGaN/GaN HEMTs fluorine plasma treatment gate trench normally-off Electronic Optical and Magnetic Materials Electrical and Electronic Engineering
In this letter, the approach of partial AlGaN recess and multiple layers of fluorinated Al 2 O 3 gate dielectric is utilized to achieve highest reported positive gate threshold voltage (V TH ) without severe reduction on 2-D electron gas carrier mobility in AlGaN/GaN HEMTs. Guided by the design and verification through analytical model, proper fluorine ions incorporation is made through fabrication. The approach resulted in a high V TH of +6.5 V and competitive drain saturation current (I DMAX ) of 340 mA/mm. Furthermore, low gate leakage current and high breakdown voltage of 1140 V were also demonstrated.

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