Abstract
A 10.5 Gb/s modified shunt-feedback transimpedance amplifier in a commercial 0.35 μm SiGe BiCMOS technology is presented. A capacitive emitter degeneration technique was used to improve the bandwidth performance of the transimpedance amplifier. It achieved a transimpedance gain of 56 dB Ω, a -3 dB bandwidth of 6.2 GHz with a 0.4 pF input parasitic capacitance value, and a noise current spectral density of 9.46 pA / sqrt(Hz). The total circuit dissipates 29 mW under a 3.3 V supply, and the chip size is only 0.25 × 0.165 mm 2 . © 2009 Elsevier Ltd. All rights reserved.