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A 112-Gb/s PAM-4 Voltage-Mode Transmitter With Four-Tap Two-Step FFE and Automatic Phase Alignment Techniques in 40-nm CMOS
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A 112-Gb/s PAM-4 Voltage-Mode Transmitter With Four-Tap Two-Step FFE and Automatic Phase Alignment Techniques in 40-nm CMOS

Pen-Jui Peng, Yan-Ting Chen, Sheng-Tsung Lai 和 Hsiang-En Huang
IEEE Journal of Solid-State Circuits, 卷.56(7), 頁碼.2123-2131
07/2021
Web of Science ID: WOS:000668857500013

摘要

Bandwidth Clocks CMOS feed-forward equalizer (FFE) four-level pulse amplitude modulation (PAM-4) Impedance Resistance transmitter (TX) voltage-mode driver. Electrical and Electronic Engineering Computer Architecture Microprocessors Resistors
This article presents a 112-Gb/s four-level pulse amplitude modulation (PAM-4) voltage-mode transmitter (TX) with a four-tap feed-forward equalizer (FFE). A two-step coarse-/fine-tuning technique is adopted in the voltage-mode FFE to reduce the number of front-end slices while maintaining sufficient resolution. In addition, the device sizes in the preceding multiplexer (MUX) and predriver can be enlarged, relaxing the self-loading effect from the layout and improving the bandwidth. An analog impedance control loop is applied to achieve output impedance matching and maintain the corresponding weighting between coarse- and fine-FFE stages. The quarter-rate 4:1 MUX incorporates an automatic phase alignment technique to eliminate the timing constraint. As a result, all of the retiming latches can be removed, saving significant power. Designed and fabricated in 40-nm CMOS, the PAM-4 TX demonstrates a high-quality eye diagram at 112 Gb/s with 3.89-pJ/b energy efficiency under a chip-on-board assembly with 5.5-dB Nyquist loss.

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引用書目主題
4 Electrical Engineering, Electronics & Computer Science
4.138 Semiconductor Technology
4.138.205 RF CMOS Design
Web Of Science研究領域
Engineering, Electrical & Electronic
ESI研究領域
Engineering

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