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A 1.4 pJ/bit, Power-Scalable 16×12 Gb/s Source-Synchronous I/O With DFE Receiver in 32 nm SOI CMOS Technology
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A 1.4 pJ/bit, Power-Scalable 16×12 Gb/s Source-Synchronous I/O With DFE Receiver in 32 nm SOI CMOS Technology

Timothy O. Dickson, Yong Liu, Sergey V. Rylov, Ankur Agrawal, Seongwon Kim, Ping-Hsuan Hsieh, John F. Bulzacchelli, Mark Ferriss, Herschel A. Ainspan, Alexander Rylyakov, …
IEEE Journal of Solid-State Circuits, 卷.50(8), 頁碼.1917-1931
08/2015
DOI: https://doi.org/10.1109/JSSC.2015.2412688

摘要

Clock distribution CTLE DFE I/O phase rotator serializer source synchronous Electrical and Electronic Engineering
A power-scalable 2 Byte I/O operating at 12 Gb/s per lane is reported. The source-synchronous I/O includes controllable TX driver amplitude, flexible RX equalization, and multiple deskew modes. This allows power reduction when operating over low-loss, low-skew interconnects, while at the same time supporting higher-loss channels without loss of bandwidth. Transceiver circuit innovations are described including a low-skew transmission-line clock distribution, a 4:1 serializer with quadrature quarter-rate clocks, and a phase rotator based on current-integrating phase interpolators. Measurements of a test chip fabricated in 32 nm SOI CMOS technology demonstrate 1.4 pJ/b efficiency over 0.75" Megtron-6 PCB traces, and 1.9 pJ/b efficiency over 20" Megtron-6 PCB traces.

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