摘要
This paper presents a 512-column linear CMOS image sensor (CIS) with 32-stage digital time-delay integration (TDI) operation. A signal processing architecture consists of analog-front-ends, analog-to-digital converters (ADCs), and digital accumulators (DAs) are designed with optimization of timing, area, and power efficiency. An eight-column-shared 10-b successive approximation register ADC with data prediction switching technique and 11-b DA are proposed to achieve a data depth of 15 b after 32-stage TDI. The achieved signal-to-noise ratio boost is 14.84 dB after 32-stage TDI operation. The proposed linear TDI sensor is implemented in 0.11- μm TSMC backside illumination CIS technology with a line time of 104 μs , a pixel pitch of 7.5 μm , and a power consumption of 153.2 μW/column.