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A 60 GHz tunable output profile power amplifier in 65 nm CMOS
Journal article   Peer reviewed

A 60 GHz tunable output profile power amplifier in 65 nm CMOS

Jenny Yi-Chun Liu, Qun Jane Gu, Adrian Tang, Ning-Yi Wang and Mau-Chung Frank Chang
IEEE Microwave and Wireless Components Letters, Vol.21(7), pp.377-379
07/2011

Abstract

CMOS millimeter wave power amplifier (PA) transformers
A fully integrated three-stage 60 GHz power amplifier with amplitude/phase compensation is realized in 65 nm CMOS. An adaptive feedback bias scheme with three control knobs is proposed to extend the linear operating region. At a supply voltage of 1 V, the fully differential amplifier achieves a linear gain of 15 dB and occupies a compact area of 0.056 mm 2 . It achieves a minimal P sat -P 1 dB separation of 0.6 dB by extending the P 1 dB by 8.5 dB. To our best knowledge, this is the smallest P sat -P 1 dB separation reported to date. With on-chip phase compensation, the output phase variation is reduced by 57%. © 2011 IEEE.

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