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A 65-nm ReRAM-Enabled Nonvolatile Processor with Time-Space Domain Adaption and Self-Write-Termination Achieving $> 4× Faster Clock Frequency and $> 6× Higher Restore Speed
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A 65-nm ReRAM-Enabled Nonvolatile Processor with Time-Space Domain Adaption and Self-Write-Termination Achieving $> 4× Faster Clock Frequency and $> 6× Higher Restore Speed

Zhibo Wang, Yongpan Liu, Albert Lee, Fang Su, Chieh-Pu Lo, Zhe Yuan, Jinyang Li, Chien-Chen Lin, Wei-Hao Chen, Hsiao-Yun Chiu, …
IEEE Journal of Solid-State Circuits
08/2017

摘要

nonvolatile flip-flops (nvFF) Nonvolatile processor (NVP) nonvolatile SRAM (nvSRAM) self-write termination (SWT) time-space domain adaption Electrical and Electronic Engineering
With an ever-increasing demand for energy efficiency, processors with instant-on and zero leakage features are highly appreciated in energy harvesting as well as "normally off" applications. Recently, zero-standby power and fast switching nonvolatile processors (NVPs) have been proposed based on emerging nonvolatile memories (NVMs), such as ferroelectric RAM or spin-transfer-torque magnetic RAM. However, previous NVPs store all data to NVM upon every power interruption, resulting in high-energy consumption and degraded NVM endurance. This paper presents a 65-nm fully CMOS-logic-compatible ReRAM-based NVP supporting time-space domain adaption. It incorporates adaptive nonvolatile controller, nonvolatile flip-flops, and nonvolatile static random access memory (nvSRAM) with self-write termination. Data redundancy in both time and space domain is fully exploited to reduce store/restore time/energy and boost clock frequency. The NVP operates at &null MHz and achieves 20 ns/0.45 nJ restore time/energy, realizing &null and &null higher speed and energy efficiency of restore and &null faster operating frequency compared with that of state of the art.

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