Abstract
A six-stage transimpedance amplifier (TIA) was realized in a 0.18-mum complementary metal-oxide-semiconductor process. By adopting an effective gain-bandwidth product (GBW) enhancement technique, π-type inductor peaking, the measured S 21 , transimpedance gain, and bandwidth are 41 dB, 75 dB · ω, and 7.2 GHz, respectively, in the presence of an on-chip photodiode capacitance of 450 fF at the input. The 10-Gb/s TIA can operate under a maximum output swing of 800 mV pp and achieve a recorded GBW per DC power of 441.1 GHz · ω/mW. © 2008 IEEE.