A 90-nm CMOS device technology with high-speed, general-purpose, and low-leakage transistors for system on chip applications

C.C. Wu; Y.K. Leung; C.S. Chang; M.H. Tsai; H.T. Huang; D.W. Lin; Y.M. Sheu; C.H. Hsieh; W.J. Liang; L.K. Han; W.M. Chen; S.Z. Chang; S.Y. Wu; S.S. Lin; H.C. Lin; C.H. Wang; P.W. Wang; T.L. Lee; C.Y. Fu; C.W. Chang; S.C. Chen; S.M. Jang; S.L. Shue; H.T. Lin; Y.C. See; Y.J. Mii; C.H. Diaz; Burn J. Lin; M.S. Liang; Y.C. Sun

doi:10.1109/IEDM.2002.1175780

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A 90-nm CMOS device technology with high-speed, general-purpose, and low-leakage transistors for system on chip applications

C.C. Wu, Y.K. Leung, C.S. Chang, M.H. Tsai, H.T. Huang, D.W. Lin, Y.M. Sheu, C.H. Hsieh, W.J. Liang, L.K. Han, …

Technical Digest - International Electron Devices Meeting, pp.65-68

2002

DOI: https://doi.org/10.1109/IEDM.2002.1175780

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A leading edge 90 nm bulk CMOS device technology is described in this paper. In this technology, multi Vt and multi gate oxide devices are offered to support low standby power (LP), general-purpose (G or ASIC), and high-speed (HS) system on chip (SoC) applications. High voltage I/O devices are supported using 70 A, 50 A, and 28 A gate oxide for 3.3 V, 2.5 V, and 1.5-1.8 V interfaces, respectively. The backend architecture is based on nine levels of Cu interconnect with hot black diamond (HBD) low-k dielectric (k<=3.0).

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Title: A 90-nm CMOS device technology with high-speed, general-purpose, and low-leakage transistors for system on chip applications
Translated title: A 90-nm CMOS device technology with high-speed, general-purpose, and low-leakage transistors for system on chip applications
Creators - without role: C.C. Wu - Taiwan Semiconductor Manufacturing Company (Taiwan)
Y.K. Leung - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.S. Chang - Taiwan Semiconductor Manufacturing Company (Taiwan)
M.H. Tsai - Taiwan Semiconductor Manufacturing Company (Taiwan)
H.T. Huang - Taiwan Semiconductor Manufacturing Company (Taiwan)
D.W. Lin - Taiwan Semiconductor Manufacturing Company (Taiwan)
Y.M. Sheu - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.H. Hsieh - Taiwan Semiconductor Manufacturing Company (Taiwan)
W.J. Liang - Taiwan Semiconductor Manufacturing Company (Taiwan)
L.K. Han - Taiwan Semiconductor Manufacturing Company (Taiwan)
W.M. Chen - Taiwan Semiconductor Manufacturing Company (Taiwan)
S.Z. Chang - Taiwan Semiconductor Manufacturing Company (Taiwan)
S.Y. Wu - Taiwan Semiconductor Manufacturing Company (Taiwan)
S.S. Lin - Taiwan Semiconductor Manufacturing Company (Taiwan)
H.C. Lin - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.H. Wang - Taiwan Semiconductor Manufacturing Company (Taiwan)
P.W. Wang - Taiwan Semiconductor Manufacturing Company (Taiwan)
T.L. Lee - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.Y. Fu - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.W. Chang - Taiwan Semiconductor Manufacturing Company (Taiwan)
S.C. Chen - Taiwan Semiconductor Manufacturing Company (Taiwan)
S.M. Jang - Taiwan Semiconductor Manufacturing Company (Taiwan)
S.L. Shue - Taiwan Semiconductor Manufacturing Company (Taiwan)
H.T. Lin - SBIP
Y.C. See - Taiwan Semiconductor Manufacturing Company (Taiwan)
Y.J. Mii - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.H. Diaz - Taiwan Semiconductor Manufacturing Company (Taiwan)
Burn J. Lin - SBIP
M.S. Liang - Taiwan Semiconductor Manufacturing Company (Taiwan)
Y.C. Sun - Taiwan Semiconductor Manufacturing Company (Taiwan)
Publication Details: Technical Digest - International Electron Devices Meeting, pp.65-68
Identifiers: 9957769870506774
Academic Unit: Institute of Photonics Technologies, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Journal article

A 90-nm CMOS device technology with high-speed, general-purpose, and low-leakage transistors for system on chip applications

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