摘要
The proposed capacitor-free hybrid-process low-dropout regulator (LDO) achieves 900-mA maximum current capacity and 99.99% peak current efficiency with 90 μ A quiescent current. By combining GaN and silicon processes, the proposed Ultrahigh gain amplifier (UHGA) enables a high loop gain to achieve 0.297-mV/A load regulation and 0.024-mV/V line regulation. Furthermore, UHGA provides a larger slew rate compared to a conventional monolithic design. The super source follower (SSF) serves as a buffer to provide dynamic source and sink current at the gate of the pass element to realize low quiescent current in the steady state and recovery times of 90 and 54 ns when the loading goes to heavy and light, respectively.