摘要
This paper presents a heterogeneous Si-SiC SiP designed for power conversion. The SiP co-integrates a gate driver, featuring an active Miller clamp, UVLO, and a zero- V CC startup circuit, with an 850V SiC MOSFET in a single package. By minimizing parasitic inductance, the SiP demonstrates a hard-switching operation capability of up to 10 MHz in a multi-pulse test (MPT) platform. At the device level, the SiC DMOS achieves a remarkable BFOM of 560MW/cm 2 , which is the best-in-class reported SiC DMOS without super-junction or engineered substrate techniques. Furthermore, the HFFOM outperforms state-of-the-art GaN and SiC discrete devices and ICs. Additional characterization reveals a 130mV/dec S.S. and negligible 0.8mV/V DIBL. Experimental results demonstrate an 18.2% reduction in switching loss compared to discrete benchmarks, with C oss hysteresis loss restricted to only 1.16% of E oss . The reliability and versatility of the platform are validated through AEC-Q101 and comprehensive testing in Multi-Pulse Test, PFC, QR-flyback, and LLC converters. This work establishes a viable and cost-effective path for the next generation of high-frequency power electronics.