摘要
The proposed bidirectional load switch enables bidirectional current conduction while effectively blocking reverse current, providing efficient and reliable power management. It operates with a maximum input voltage (VIN) of 48 V and supports load currents (I-Load) up to 25 A, achieving a low on-resistance (R-on ) of 11.2 m Omega. A driving current limiter is implemented to regulate the gate-driving strength and suppress inrush current, allowing the bidirectional GaN (Bi-GaN) switch to turn on smoothly. This results in a rising propagation delay (Tpdr) of 347.4 mu s and a rise time (T-r) of 936.7 mu s, reducing inrush current by 91.4%. Additionally, the spike-reduced turn-off circuit enables fast turn-off with a 409.7 ns falling propagation delay (T-pdf) and 483.6 ns fall time (Tf), reducing voltage overshoot by 89.5% to protect on-chip devices. The Bi-GaN device also adopts a split-source field plate structure, limiting the R-on increase to only 28.5% after 168 h of stress testing, thereby ensuring long-term reliability and performance stability.