摘要
There is a growing trend of developing steep slope transistors with subthreshold swing (SS) below 60 mV dec -1 . At present, there are mainly three kinds of steep slope transistors: tunneling transistor, negative capacitance transistor, and nano-electromechanical relay. Here, a new kind of steep slope transistor named "filament transistor" is proposed with SS down to sub-10 mV dec -1 . Due to the gate E-filed can penetrate through the graphene, the gate can effectively control the filament formation/rupture inside the 5 nm AlO x with very steep slope. In reverse sweep, the gate can induce the filament formation with SS down to 4.6 mV dec -1 . In forward sweep, the gate can break the filament with SS down to 12.2 mV dec -1 . Taking the advantages of nanofilament, the filament transistor holds a great potential to scaling down to 5 nm without performance changing.