A Harmonic Radar Tag With High Detection Range Utilizing Ge FinFETs CMOS Technology

C.-H. Hsieh; T.-C. Hong; C.-Y. Yang; Y.-H. Chen; X.-R. Yu; W.-H. Lu; R.W. Chuang; Z.-M. Tsai; Y.-J. Lee; Y. Li; W.-F. Wu; T.-S. Chao; S. Samukawa; Y.-H. Wang; W.-K. Yeh; J.-H. Tarng

doi:10.1109/LED.2022.3206604

期刊文章

A Harmonic Radar Tag With High Detection Range Utilizing Ge FinFETs CMOS Technology

C.-H. Hsieh, T.-C. Hong, C.-Y. Yang, Y.-H. Chen, X.-R. Yu, W.-H. Lu, R.W. Chuang, Z.-M. Tsai, Y.-J. Lee, Y. Li, …

IEEE Electron Device Letters, 卷.43(11), 頁碼.1798-1801

2022

DOI: https://doi.org/10.1109/LED.2022.3206604

Web of Science ID: WOS:000876041700005

摘要

CMOS

Ge FinFET

harmonic radar

tag

Antennas

CMOS integrated circuits

FinFET

Fins (heat exchange)

Germanium

Radar

Threshold voltage

Tin

CMOS

Detection range

Fin field-effect transistors

FinFETs

Germania fin field-effect transistor

Germaniums (Ge)

Harmonic radar

Schottky diodes

Tag

Schottky barrier diodes

This study fabricated and verified a germanium (Ge) fin field-effect transistor (FinFET) on developed GeSOI platform. The Ge FinFETs were demonstrated for radio-frequency (RF) applications with a harmonic radar tag. The relation between the detection range (Rd), received power (Pr), and threshold voltage (Vth) of a diode was qualitatively discussed. To meet the requirement of a low Vth, two kinds of Ge FinFETs with different metal gates were fabricated and compared. After the evaluation of electrical characteristics of n-type and p-type Ge FinFETs with different fin numbers, a tag for harmonic radar was designed by integrating diode-connected TiN gate 1-fin Ge FinFETs (Vth = 0.1 V) with a high impedance antenna. The RF performance was evaluated at 9.4 GHz and 18.8 GHz. The results indicated a 50 % improvement in the Rd as compared to the tag using a commercial Schottky diode. Therefore, the proposed low-Vth Ge FinFET on developed GeSOI platform for complementary metal–oxide–semiconductor (CMOS) is promising for high-sensitivity harmonic radar applications. © 2022 IEEE.

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題名: A Harmonic Radar Tag With High Detection Range Utilizing Ge FinFETs CMOS Technology
創作者：: C.-H. Hsieh - National Yang Ming Chiao Tung University
T.-C. Hong - National Yang Ming Chiao Tung University
C.-Y. Yang - National Cheng Kung University
Y.-H. Chen - National Yang Ming Chiao Tung University
X.-R. Yu - National Cheng Kung University
W.-H. Lu - Taiwan Semiconductor Manufacturing Company (Taiwan)
R.W. Chuang - National Cheng Kung University
Z.-M. Tsai - National Yang Ming Chiao Tung University
Y.-J. Lee - National Yang Ming Chiao Tung University
Y. Li - National Yang Ming Chiao Tung University
W.-F. Wu - Taiwan Semiconductor Manufacturing Company (Taiwan)
T.-S. Chao - National Yang Ming Chiao Tung University
S. Samukawa - National Yang Ming Chiao Tung University
Y.-H. Wang - National Cheng Kung University
W.-K. Yeh - Taiwan Semiconductor Manufacturing Company (Taiwan)
J.-H. Tarng - National Yang Ming Chiao Tung University
出版者: Institute of Electrical and Electronics Engineers Inc.; PISCATAWAY
總頁數: 4
補助款備註: This work was supported in part by the Center for mmWave Smart Radar Systems and Technologies under Grant MOST 109-2634-F-009-030, Grant 110-2634-F-009-028, Grant 109-2221-E-009-033, Grant 109-2923-E492-001-MY3, Grant 109-2628-E-492-001-MY3, Grant 107-2221-E-492016-MY3, Grant 109-2221-E-009-124-MY3, Grant 111-2221-E-A49181, and Grant 110-2221-E-A49-139.
學術資源類型: 期刊文章
出版日期: 2022
出版資訊: IEEE Electron Device Letters, 卷.43(11), 頁碼.1798-1801
語言: 英語

A Harmonic Radar Tag With High Detection Range Utilizing Ge FinFETs CMOS Technology

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