摘要
A trilayer of Sn/Bi/Sn was deposited on a heat sink substrate as the die-bonding material for a light-emitting diode. The eutectic feature of the Sn/Bi system allowed the die-bonding to be carried out at a low temperature using a facile thermocompression process. Two thin Sn layers were sacrificed to form two intermetallic compounds sandwiching the Bi layer, and this high-temperature die-bonding structure showed superior thermal management performance under harsh operation environments (high temperature/current) based on thermal infrared, thermal resistance, and derating analyses.