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A K-band low-noise amplifier in 0.18-μm CMOS technology for sub-1-v operation
Journal article   Open access   Peer reviewed

A K-band low-noise amplifier in 0.18-μm CMOS technology for sub-1-v operation

Jun-De Jin and Shawn S. H. Hsu
Microwave and Optical Technology Letters, Vol.51(9), pp.2202-2204
09/2009

Abstract

CMOS K-band Low-noise amplifier Transformer feedback
A K-band low-noise amplifier (LNA) was realized in a standard 0.18-μm CMOS technology. The cascaded common-source configuration of four stages was adopted for low voltage operation and high gain performance. In addition, the gate-source transformer feedback technique was employed to achieve a low noise figure (NF), which also enabled a single power supply operation and without using any resistive components. Under a supply voltage of only 0.8 V and a DC power consumption P DC of 12.6 mW, the measured gain and NF are 14.5 and 5.3 dB at 21 GHz, respectively. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2202-2204, 2009 Published online in Wiley InterScience (www.interscience.wiley.com).
url
https://doi.org/10.1002/mop.24530View
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