摘要
The proposed GaN-based hybrid gate driver consists of two types of inverters and achieves a low quiescent current (IQ) of 23.2 μA with a fast-operating frequency of 25 MHz. At the same time, the automatic precharge technique senses the voltage of the bootstrapped capacitor and reduces the standby mode leakage current (ILKG) from a few milliamps to 62 μA. Therefore, the efficiency is greater than 92% at the entire output load. Finally, the soft startup clamping technique limits the peak voltage from 2.51 kV to 620 V, reducing power consumption during soft-start and preventing 650 V GaN devices from being damaged by high-voltage stress. As a result, the LLC converter achieves a peak efficiency of 98.6% and complies with the 80 Plus Titanium and Energy Star standards for power supply units.