摘要
We propose and implement a new low-voltage triggering silicon-controlled rectifier (SCR) embedded in the guard rings of a lateral diffused MOS (LDMOS) transistor. According to the reduced surface-field principle, the breakdown voltage is almost proportional to the lateral distance of the high-voltage n-well [1]. Because its trigger voltage (Vt1) is lower than that of the LDMOS, the proposed SCR protects the LDMOS from electrostatic stress damage, without requiring special processes, trigger devices, trigger circuits, and increasing the device dimension. Therefore, it is expected to realize next-generation small-scale devices.