On-chip non-volatile compute-in-memory (nvCIM) enables artificial intelligence (AI)-edge processors to perform multiply-and-accumulate (MAC) operations while enabling the non-volatile storage of weight data in power-off mode to enhance energy efficiency. However, the design challenges of nvCIM-based AI-edge processors include: 1) lack of a nvCIM-friendly computing flow; 2) a tradeoff between usage of memory devices versus process variations, computing yield and area overhead; 3) long computing latency and low energy efficiency; and 4) small-signal margin and large bitline current. This article presents an nvCIM-friendly AI-edge processor that uses a hybrid-mode resistive random access memory nvCIM (hmRe-nvCIM) macro to overcome the abovementioned challenges by three processor-level schemes: 1) a multimode nvCIM engine controller (mmCIM-EC); 2) a bitwise-input-sparsity and place-value-aware dynamic accumulation (BIS-PVA-DA); and 3) a bitwise weight column inversion (BWCI) and two macro-level schemes: 1) a dynamic-accumulation-aware current quantization (DACQ) and 2) a current&null analog-to-digital converter (CVH-ADC). The proposed AI-edge processor fabricated using 22-nm technology achieved 51.4 TOPS/W and 472.7- $mu$ s wake-up to response time, while the hmRe-nvCIM macro achieved 67.2 TOPS/W under 8-bit input, 8-bit weight, and 22-or 24-bit output precision.
A Nonvolatile AI-Edge Processor With SLC–MLC Hybrid ReRAM Compute-in-Memory Macro Using Current–Voltage-Hybrid Readout Scheme
IEEE Journal of Solid-State Circuits, Vol.59(1), pp.116-127
01/2024
: WOS:001088286600002
1
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- 5 Physics
- 5.310 Resistive Switching
- 5.310.1164 Resistive Switching
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- Engineering, Electrical & Electronic
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- A Nonvolatile AI-Edge Processor With SLC–MLC Hybrid ReRAM Compute-in-Memory Macro Using Current–Voltage-Hybrid Readout Scheme
- A Nonvolatile AI-Edge Processor With SLC–MLC Hybrid ReRAM Compute-in-Memory Macro Using Current–Voltage-Hybrid Readout Scheme
- Hung-Hsi Hsu (Author) - National Tsing Hua UniversityTai-Hao Wen (Author) - National Tsing Hua UniversityWei-Hsing Huang (Author) - Department of Electronic Engineering, National Tsing Hua University (NTHU), Hsinchu, TaiwanWin-San Khwa (Author) - Taiwan Semiconductor Manufacturing Company (Taiwan)Yun-Chen Lo (Author) - National Tsing Hua UniversityChuan-Jia Jhang (Author) - National Tsing Hua UniversityYu-Hsiang Chin (Author) - National Tsing Hua UniversityYu-Chiao Chen (Author) - National Tsing Hua UniversityChung-Chuan Lo (Author) - National Tsing Hua UniversityRen-Shuo Liu (Author) - National Tsing Hua UniversityKea-Tiong Tang (Author) - Department of Electronic Engineering, National Tsing Hua University (NTHU), Hsinchu, TaiwanChih-Cheng Hsieh (Author) - National Tsing Hua UniversityYu-Der Chih (Author) - Taiwan Semiconductor Manufacturing Company (Taiwan)Tsung-Yung Jonathan Chang (Author) - Taiwan Semiconductor Manufacturing Company (Taiwan)Meng-Fan Chang (Author) - Taiwan Semiconductor Manufacturing Company (Taiwan)
- IEEE
- Journal article
- 01/2024
- IEEE Journal of Solid-State Circuits, Vol.59(1), pp.116-127
- English
- false