A Novel AND-Type FinFET Contact RRAM in Pure 7 nm FinFET CMOS Logic Process

Pin-Jie Zeng; Wei-Hwa Lin; Yen-Yu Liu; Yue-Der Chih; Yih Wang; Jonathan Chang; Ya-Chin King; Chrong Jung Lin

doi:10.1109/LED.2025.3614177

A Novel AND-Type FinFET Contact RRAM in Pure 7 nm FinFET CMOS Logic Process

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A Novel AND-Type FinFET Contact RRAM in Pure 7 nm FinFET CMOS Logic Process

Pin-Jie Zeng, Wei-Hwa Lin, Yen-Yu Liu, Yue-Der Chih, Yih Wang, Jonathan Chang, Ya-Chin King 和 Chrong Jung Lin

IEEE electron device letters, 卷.46(12), 頁碼.2281-2284

01/12/2025

DOI: https://doi.org/10.1109/LED.2025.3614177

Web of Science ID: WOS:001632650100021

摘要

Engineering, Electrical & Electronic

Science & Technology

Engineering

Technology

This letter reports a new AND-type FinFET Slot Contact RRAM (SCRRAM), designed to be fully compatible with the 7nm FinFET CMOS logic process. Unlike the conventional approaches, our design requires no additional process steps or masks during CMOS logic processes. Featuring an innovative Slot Contact/Metal Gate stacking structure, it incorporates unique self-formed Ti-based Transition Metal Oxide (TMO) that serves as a stable resistive storage node, also offering a robust 10X read window, an ultrahigh memory density of 76Mb/mm(2), superior cycling and retention reliability. Characterization results demonstrate the potential of SCRRAM as a highly promising solution for high-density embedded memory in the advanced IoT and MCU applications for 7nm FinFET and beyond technology nodes.

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題名: A Novel AND-Type FinFET Contact RRAM in Pure 7 nm FinFET CMOS Logic Process
創作者：: Pin-Jie Zeng - National Tsing Hua University
Wei-Hwa Lin - Taiwan Semiconductor Manufacturing Company (Taiwan)
Yen-Yu Liu - Taiwan Semiconductor Manufacturing Company (Taiwan)
Yue-Der Chih - Taiwan Semicond Mfg Co, Design Technol Div, Hsinchu 300, Taiwan
Yih Wang - Taiwan Semiconductor Manufacturing Company (Taiwan)
Jonathan Chang - Taiwan Semiconductor Manufacturing Company (Taiwan)
Ya-Chin King - 國立清華大學, 半導體研究學院
Chrong Jung Lin - 國立清華大學, 半導體研究學院
出版者: IEEE
總頁數: 4
補助款備註: National Science and Technology Council (NSTC), Taiwan; National Science & Technology Council (NSTC) Taiwan
學術資源類型: 期刊文章
出版日期: 01/12/2025
出版資訊: IEEE electron device letters, 卷.46(12), 頁碼.2281-2284
語言: 英語

A Novel AND-Type FinFET Contact RRAM in Pure 7 nm FinFET CMOS Logic Process

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