摘要
The fluctuation in the minority carrier lifetime (MCLT) measurement is observed when monitoring the metal contamination for the furnace performing denuded zone formation, and the mechanism responsible for this phenomenon is examined in this paper. Among various possible causes, the oxygen precipitates are found to be the main contributor for this MCLT fluctuation because the amount of oxygen precipitates after denuded zone formation is strongly related to the initial oxygen concentration in the wafer and this makes the MCLT value liable to be affected even for tiny initial oxygen difference. A gate oxide recipe is suggested to be adopted for MCLT monitoring in furnace performing denuded zone formation to circumvent the problem. For the gate oxide recipe, not only is the monitoring result stable but it is feasible to produce MCLT test wafers with real products without sacrificing tool productivity.