Abstract
This article introduces a novel quasi-floating channel model for accurately simulating the third quadrant behavior of silicon carbide (SiC) mosfets. The proposed model, developed to overcome the shortcomings in existing models, especially under the negative VGS bias, substantially improves the simulation accuracy of the I–V characteristics. The efficacy of the model is demonstrated through extensive comparisons with commercial devices of various structures. The experimental validations highlight the superiority of the proposed model, demonstrating a maximal 95.6% improvement in root-mean-square error (RMSE) compared to conventional models, along with a maximal 87.5% enhancement in the total calculation time. Furthermore, for the extreme cases, this article also evaluates the proposed model with gallium nitride (GaN) high-electron-mobility transistor (HEMT), which is a fully floating channel structure as a comparison and the proposed model also demonstrates high accuracy and feasibility with a maximal 94.5% reduction in RMSE. This article provides an accurate and reliable model for predicting device behavior for various SiC devices.