摘要
This paper proposes a GaN-based gate driver optimized for gate injection transistors (GITs), whose current-driven gate behavior renders conventional voltage-driven drivers inefficient. A self-calibrated dual-R ON -path architecture is introduced to meet the unique drive requirements by delivering both high transient turn-on current and low-loss steady-state current. In addition, a tri-level gate-control scheme is employed to handle hard-switching conditions, improving coupling immunity and suppressing third-quadrant conduction in half-bridge operation. Fabricated in a 0.5- μ m GaN process, the proposed driver achieves a peak output current of 1.93 A and supports up to 1200 W in a 400-V boost converter. Experimental results demonstrate up to 2× reduction in driver power loss compared to conventional RC-interface and Schottky-gate drivers. The converter achieves a peak efficiency of 97.62%, while the conduction-loss increase from 50 ° C to 100 ° C is limited to 1.27× , indicating enhanced thermal robustness and reduced power loss.