摘要
The electrical currents and the capacitances of Cu/low-k materials are comprehensively investigated through the inter level finger-shape structures. The carrier hopping conduction mechanism at low voltage range and the Schottky conduction mechanism at high voltage range are proposed to explain the observed the temperature and polarity dependence. Mobile ion current was observed under repeated voltage bias sweeps. The novel variation of voltage dependence of inter level capacitance resulting from to temperature difference is demonstrated for the first time. Dipole and space charge polarizations are found to dominate the capacitance characteristics at low and high temperature respectively. The proposed model of voltage coefficients of capacitance combining both polarization mechanisms well explains the temperature dependence effect on the inter level Cu/low-k capacitors. AC conductance is found to increase as temperature increases, which is explained to be caused by the carrier conduction rather than polarization effect.