摘要
Non-ohmic characteristics of ZnO varistors are obtained by diffusing Bi 2 O 3 and/or Sb 2 O 3 into a ZnO-based matrix. The varistors derived from metal oxide diffusion have a smaller non-linearity parameter, lower threshold field, larger dielectric constant and larger dissipation factor than conventionally processed varistors. The difference between these two types of varistors is discussed on the basis of the Schottky barrier model. The low threshold field thus obtained makes the metal oxide diffusion process a potential approach in fabricating low-voltage varistors. © 1989 IOP Publishing Ltd.