Abstract
We propose a new Body-Effect-assisted NOR-type (BeNOR) flash memory for multilevel storage application. Body effect assisted self-convergent programming employs secondary electron injection but a different operation bias from the CHannel Initiated Secondary ELectron (CHISEL) flash. Accurately programmed states are accomplished by the linear dependence of V TH on the bit-line voltage; therefore, parallel multilevel programming and elimination or reduction of bit-by-bit verification can be achieved. In this paper, programming power consumption and reliability considerations are also assessed for efficient and long-term operation.