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A compact 0.114-GHz ultra-wideband low-noise amplifier in 0.13-μm CMOS
Journal article   Peer reviewed

A compact 0.114-GHz ultra-wideband low-noise amplifier in 0.13-μm CMOS

Po-Yu Chang and Shawn S. H. Hsu
IEEE Transactions on Microwave Theory and Techniques, Vol.58(10), pp.2575-2581
10/2010

Abstract

CMOS current reuse inductorless low-noise amplifier (LNA) resistive feedback ultra-wideband (UWB)
A compact ultra-wideband low-noise amplifier (LNA) with a 12.4-dB maximum gain, a 2.7-dB minimum noise figure (NF), and a bandwidth over 0.114 GHz is realized in a 0.13-μm CMOS technology. The circuit is basically an inductorless configuration using the resistive-feedback and current-reuse techniques for wideband and high-gain characteristics. It was found that a small inductor of only 0.4 nH can greatly improve the circuit performance, which enhances the bandwidth by 23%, and reduces the NF by 0.94 dB (at 10.6 GHz), while only consuming an additional area of 80 × 80. The LNA only occupies a core area of 0.031 mm 2 , and consumes 14.4 mW from a 1.8-V supply. © 2010 IEEE.

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