摘要
A comprehensive phase-change memory (PCM) HSPICE model with a simplified and flexible parameterized function was proposed and developed in this work. To extract the specific device parameters relevant to the cell characteristics for the establishment of PCM HSPICE model, a novel PCM cell with double-confinement structure was fabricated and electrically characterized. Several interrelated functional circuits were used to totally describe the characteristics of PCM cell and incorporated into a two-terminal HSPICE model. Based on this flexible model with designated device parameters, the programming characteristics of the double-confined cell including the determined static and dynamic programming states and the pulse-dependent and current-induced phase-transition behaviors can be accurately emulated. The simulation results show a good agreement with the experimental current-voltage (I-V) and resistance-current (R-I) curves, implying the feasibility and accuracy of the PCM HSPICE model. Therefore, the PCM HSPICE model developed in this work is applicable to future PCM chip designs. © 2008 The Japan Society of Applied Physics.