摘要
A new type of true random number generator, based on the random telegraph noise of a contact-resistive random access memory device, is proposed in this letter. The random-number generator consists of only a simple bias circuit plus a comparator, leading to small circuit area and low power consumption. By realizing this generator by the 65-nm complementary metal-oxide-semiconductor logic process, the occupied area can be as low as 45 mu;m 2 , demonstrating substantial saving in the circuit area. © 2012 IEEE.