摘要
A distributed charge storage with GeO 2 nano-dots was studied. The aerial density and mean size of the dots were estimated to be about 4.3×10 11 cm -2 and 5.5 nm. The existence of the composition of the nano-dots was confirmed by performing x-ray absorption near-edge structure (XANES) measurements. The results show that the memory window is estimated to ∼0.45 V, under the low voltage operation of 5 V.