A fully CMOS compatible one-time programmable (OTP) cell with a novel intra-fin cell isolation (IFCI) structure on a FinFET CMOS process has been proposed. The IFCI OTP cell utilizes the field-enhanced dielectric breakdown at fin corners to perform a fast and low-voltage program operation. Moreover, an ultrasmall intra-fin cell-to-cell isolation is firstly introduced to markedly shrink the cell size by eliminating the areaconsuming spacing of fin-to-fin isolation. The IFCI FinFET OTP with fast program speed, excellent read disturb immunity, and reliable data retention is a promising solution for logic nonvolatile memory (NVM) technology in advanced CMOS nodes.
- A high density FinFET one-time programmable cell with new intra-fin cell isolation for advanced system on chip applications
- Yu-Zheng Chen (Author) - National Tsing Hua UniversityJo En Yuan (Author) - National Tsing Hua UniversityPing Chun Peng (Author) - National Tsing Hua UniversityWoan Yun Hsiao (Author) - National Tsing Hua UniversityYa-Chin King (Author) - National Tsing Hua UniversityChrong Jung Lin (Author) - National Tsing Hua University
- © 2016 The Japan Society of Applied Physics.
- Journal article
- 01/04/2016
- Japanese Journal of Applied Physics, Vol.55(4), 04EE06
- English