摘要
A new fully logic process compatible 2T multitime programmable (MTP) memory cell has been introduced for embedded logic nonvolatile memory (NVM) applications. The cell adopts a novel contact coupling gate structure as an additional control gate for highly efficient operation and high-density memory applications. A new 2T n-channel MTP 2-Kb memory test chip has been also successfully demonstrated on pure 0.18-μm CMOS logic process without extra masking or process step. Furthermore, the embedded 2T MTP cell performs an efficiently program/erase operation by CHE injection and FN tunnel with highly reliable endurance and retention characteristics. © 2012 IEEE.