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A new antifuse cell with programmable contact for advance CMOS logic circuits
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A new antifuse cell with programmable contact for advance CMOS logic circuits

Maybe Chen, Chian-En Huang, Yuan-Heng Tseng, Ya-Chin King 和 Chrong-Jung Lin
IEEE Electron Device Letters, 卷.29(5), 頁碼.522-524
05/2008
DOI: https://doi.org/10.1109/LED.2008.920754

摘要

Antifuse Dielectric breakdown Gate oxide Nonvolatile memories (NVMs) One-time programmable (OTP) Oxide breakdown Resist-protection oxide (RPO) Electrical and Electronic Engineering
A new CMOS-process-compatible programmable contact antifuse (PCAF) cell is presented in this letter for advance programmable logic applications. This innovative PCAF cell adapts an oxide layer formed by the etched resist-protection oxide layer under a properly designed contact region, which results in a highly scalable one-time-programmable solution for advance logic circuits. A subcircuit model describing the I-V characteristics of the antifuse cell before and after program is developed to facilitate the future PCAF memory macro design. © 2008 IEEE.

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