Abstract
A new CMOS-process-compatible programmable contact antifuse (PCAF) cell is presented in this letter for advance programmable logic applications. This innovative PCAF cell adapts an oxide layer formed by the etched resist-protection oxide layer under a properly designed contact region, which results in a highly scalable one-time-programmable solution for advance logic circuits. A subcircuit model describing the I-V characteristics of the antifuse cell before and after program is developed to facilitate the future PCAF memory macro design. © 2008 IEEE.