Abstract
In this article, we propose a new process method to improve the light output power of GaAs vertical-cavity surface-emitting lasers (VCSELs). The VCSELs with filling Al metal into the ring trench will exhibit a higher quantum efficiency and have a light output power of 1.45 times higher than those without filling Al. In addition, the trench filled with Al metal can benefit in the bonding process and behavior as a mirror to reduce the output power loss. These VCSELs show good output characteristics and high-temperature operation. © 2002 Elsevier Science Ltd. All rights reserved.