A new sensing scheme for sensitivity enhancement of low-temperature polycrystalline silicon photodetecors

Chih-Yang Chen; Chrong-Jung Lin; Ya-Chin King

doi:10.1109/JSEN.2010.2098437

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Journal article

A new sensing scheme for sensitivity enhancement of low-temperature polycrystalline silicon photodetecors

Chih-Yang Chen, Chrong-Jung Lin and Ya-Chin King

IEEE Sensors Journal, Vol.11(6), pp.1478-1483

2011

DOI: https://doi.org/10.1109/JSEN.2010.2098437

Abstract

Low-temperature polycrystalline silicon

pulse-frequency modulation

Schmitt trigger

thin- film transistors

A photo-detector employing a pulse-frequency-modulation (PFM) circuit featuring an adjustable response is realized on a Low Temperature Polycrystalline Silicon (LTPS) panel. A constant-biasing scheme on the photodiode is proposed to overcome the low sensitivity problem in LTPS PIN diodes and greatly improves the output response. Furthermore, an LTPS PIN diode model capable of accurately predicting the characteristics of the detector circuits is established and verified. © 2006 IEEE.

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Title: A new sensing scheme for sensitivity enhancement of low-temperature polycrystalline silicon photodetecors
Creators - without role: Chih-Yang Chen - Institute of Electronics Engineering , National Tsing-Hua University
Chrong-Jung Lin - National Tsing Hua University
Ya-Chin King - Institute of Electronics Engineering , National Tsing-Hua University
Publication Details: IEEE Sensors Journal, Vol.11(6), pp.1478-1483
Identifiers: 9957775520906774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Journal article

A new sensing scheme for sensitivity enhancement of low-temperature polycrystalline silicon photodetecors

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