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A new stress migration failure mode in highly scaled Cu/Low-κ interconnects
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A new stress migration failure mode in highly scaled Cu/Low-κ interconnects

Chang-Chun Lee 和 Anthony S. Oates
IEEE Transactions on Device and Materials Reliability, 卷.12(2), 頁碼.529-531
2012
DOI: https://doi.org/10.1109/TDMR.2012.2185497

摘要

Cu interconnect low-kappa; reliability stress migration (SM) stress-voiding Electrical and Electronic Engineering Electronic Optical and Magnetic Materials Safety Risk Reliability and Quality
We identify a new stress migration (SM) failure mode in Cu/low-kappa; interconnects whereby voids are formed in very narrow trenches close to large Cu plates. Finite-element analysis shows that the new failure mode is generated by large stress gradients associated with geometry changes in highly scaled Cu interconnects. This work indicates that management of mechanical stresses will be an important issue for future development of reliable Cu/low-kappa; interconnects. © 2012 IEEE.

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