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A novel 2-Bit/Cell p-channel logic programmable cell with pure 90-nm CMOS technology
Journal article   Peer reviewed

A novel 2-Bit/Cell p-channel logic programmable cell with pure 90-nm CMOS technology

Ying-Je Chen, Chia-En Huang, Hsin-Ming Chen, Han-Chao Lai, J.R. Shih, Kenneth Wu, Ya-Chin King and Chrong-Jung Lin
IEEE Electron Device Letters, Vol.29(8), pp.938-940
08/2008

Abstract

2 bit/cell Logic nonvolatile memory (NVM) Nitride storage node One-time programmable (OTP) P-channel Self-aligned nitride (SAN)
A new p-channel nitride-based one-time programmable (OTP) memory was developed for advanced-logic nonvolatile-memory (NVM) applications. A 0.296-μm 2 /bit (∼35 F 2 ) OTP cell, i.e., 0.592 μm 2 /cell, with a self-aligned nitride storage node was fabricated using standard 90-nm CMOS processes and is fully independent of gate oxide for high scalability. Additionally, the ultrahigh-density OTP cell exhibits excellent retention, immunity against disturbance, and a wide on/off window under the band-to-band hot electron programming. In summary, the new p-channel OTP cell is a very promising solution for use in high-density logic NVM applications beyond the 90-nm technology node. © 2008 IEEE.

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