Abstract
A technique is described which employs resonant Raman scattering for nondestructive, quantitative analysis of alloy composition distributions and their volume fractions in semiconductor microstructures. Use of this technique is demonstrated via application to extract the wire and barrier region compositions and the shape of the composition modulation profile of narrow (∼150Å) In x Ga 1-x P multiquantum wire array grown via a strain-induced laterally ordered process. © 1998 American Institute of Physics.