摘要
Reconfigurable field-effect transistors (FETs) combine unipolar n- and p-type characteristics in a single programmable device and could be used to reduce the complexity of electronic devices. However, current reconfigurable FETs require a constant voltage supply to achieve polarity conversion, leading to high power consumption. Here we report a reconfigurable FET that is based on a hexagonal boron nitride/rhenium diselenide/hexagonal boron nitride (hBN/ReSe 2 /hBN) heterostructure and has a nonvolatile and tunable polarity. A photoinduced trapping mechanism is used to drive photoexcited holes or electrons into the interface between the hBN and the silicon dioxide substrate. The reconfigurable FET can switch between a transistor and memory mode, and several FETs can be used to create inverter, AND, OR, NAND, NOR, XOR and XNOR circuits. We also show that, when in memory-mode operation, the devices can be used to emulate synaptic functions for neuromorphic computing systems.