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A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio
Journal article   Peer reviewed

A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio

Xiang Fang, Chia-Ho Lin, Yung-Tai Sun, Huei-Tzu Chin, Hsiao-Wen Zan, Hsin-Fei Meng, Sheng-Fu Horng and Lon A. Wang
Organic Electronics: physics, materials, applications, Vol.31, pp.227-233
01/04/2016
DOI: https://doi.org/10.1016/j.orgel.2016.01.027
Appears in  keyword about Physics

Abstract

Lift-off Nanoimprint lithography Organic transistor P3HT Vertical
A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 × 10 -5 mA/cm 2 and high ON/OFF current ratio as high as 10 5 .

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