Abstract
We utilized the conventional planar fabrication techniques and the electro-chemical etching method to prepare porous Si layers in the p-type region of a p-n junction, which makes the study on the transverse transport property of this material possible. The junctions were fabricated by shallow diffusion or low energy ion-implantation, with porous Si formed perpendicular to the junction and between two ohmic contacts. This structure confines currents to the direction parallel to the surface. Various junction depths and etching depths were tried. The porous Si structure was examined by XTEM and correlated with the electrical data. A distinct photoconductivity feature has been observed. © 1993.