摘要
This letter investigates an abnormal recovery phenomenon induced by hole injection during hot carrier degradation in silicon-on-insulator n-typemetal-oxide-semiconductor transistors. The method by which the hole injection induces the abnormal recovery behavior can be clarified by different hot carrier degradation (HCD)measurement sequences. According to this HCD result, the channel surface energy band is drawn down and the interface defect will be temporarily shielded, an effect caused by the trapped hole. Furthermore, results of different stress voltage experiments indicate that the amount of hole injection is determined by the electric field between the gate and drain.