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Abnormal resistivity-temperature characteristics of semiconducting (Ba1-xPbx)TiO3 materials prepared by microwave sintering
Journal article   Peer reviewed

Abnormal resistivity-temperature characteristics of semiconducting (Ba1-xPbx)TiO3 materials prepared by microwave sintering

Horng-Yi Chang, Yen-Yi Lin, Kuo-Shung Liu, CHEN-TI HU, Tsai-Fa Lin and I.-Nan Lin
Integrated Ferroelectrics, Vol.13(1-3), pp.47-54
1996

Abstract

(Ba1-xPbx)TiO3 Core-shell Double critical temperature Interdiffusion Microwave sintering Rapid thermal sintering
(Ba 0.7 Pb 0.3 )TiO 3 and (Ba 0.4 Pb 0.6 )TiO 3 materials possessing double critical temperature (T c ) and single high-T c in resistivity-temperature (p-T) behavior, respectively, were obtained by microwave sintering at 1050°C for 5 minutes. These characteristics were ascribed to the existence of the dual phases with core-shell structure. The cooling-rate control modified the relative magnitude of low-T c and high-T c resistivity jumps, without altering the T c -values. It occurred via the change in relative proportion of the core and shell phases.

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