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Achieving dislocation strengthening in hafnium carbide through high pressure and high temperature
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Achieving dislocation strengthening in hafnium carbide through high pressure and high temperature

Hao Liang, Weitong Lin, Leiming Fang, Shixue Guan, Qiming Wang, Wenqiang Wang, Zhijian Fan, Lei Liu, Ji-Jung Kai, Fang Peng, …
Journal of Physical Chemistry C, 卷.125(43), 頁碼.24254-24262
11/2021

摘要

Electronic Optical and Magnetic Materials Energy (all) Physical and Theoretical Chemistry Surfaces Coatings and Films
Dislocations profoundly impact the mechanical behavior of materials. High dislocation density induced strengthening is easily achieved in metallic materials, but it is a challenge in ceramics. Here, we highlight the dislocation engineering of an ultrahigh-temperature ceramic, hafnium carbide (HfC), by high-pressure and high-temperature (HPHT) consolidation. The microstructure and temperature-dependent high-pressure consolidation behaviors were systematically investigated by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Our results reveal that pressure-induced intergranular strains promote the generation of high-density dislocations in multiple orientations near grain boundaries and finally enhance the hardness and oxidation resistance of the HfC ceramic. These findings elucidate that dislocation strengthening can be achieved in ultra-high-temperature ceramic HfC, which offers crucial insights for the design and synthesis of advanced ceramic materials.

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