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Adsorption and abstraction reactions of HCl on a single Si(100) dangling bond
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Adsorption and abstraction reactions of HCl on a single Si(100) dangling bond

Hong-Dao Li, Chan-Yuen Chang, Ling-Ying Chien, Shih-Hsin Chang, T.-C. ChiangDeng-Sung Lin
Phys. Rev. B, 卷.83(7), 頁.075403-1
2011

摘要

HCl;single Si(100);dangling bond
On a Si(100)-(2×1) surface with abundant dangling bonds, reaction of HCl molecules at room temperature is dominated by exothermic dissociative adsorption of H and Cl on two adjacent dangling bonds. This coadsorption reaction is blocked for an isolated dangling bond, yet surprisingly endothermic H or Cl abstractive adsorption occurs, as observed by in situ scanning tunneling microscopy. On an isolated dimer dangling bond (DB) pair, coadsorption of H and Cl is common as expected, but adsorption of a pair of abstracted Cl or H from two HCl molecules also occurs. These results, complemented by theoretical calculations, indicate that dissociative adsorption and abstractive reaction of a multiatom gas molecule can be initiated at a single DB by forming an intermediate adsorption state.

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