Abstract
The adsorption and switching behaviors of Ti atoms on Si(111)-7 × 7 surfaces for room-temperature and 100 °C depositions have been investigated by successive scanning tunneling microscope (STM) imagings of the same region as well as by synchrotron radiation ultraviolet photoemission spectroscopy (SR-UPS). At very low coverage (0.02 monolayer), individual Ti atoms are confined and switched within the "subtriangular" region consisting of two neighboring center adatoms and corresponding comer adatom in a half unit cell at room temperature. Both STM and SR-UPS data indicate that the individual Ti atoms adsorbed are associated with the Si rest atom sites. The Ti atoms were found to be more mobile in faulted halves than that in unfaulted halves.