Abstract
Low resistivity TiSi2 and CoSi2 are two primary candidates for metal contacts in ULSI devices. In the present paper, the authors review the results of investgations on l. the formation of TiSi2 on N+ impalnted ultrashallow contacts with and without an thin interposing Mo layer, 2 self-aligned fomation of CoSi2 on the selective epitaxial growth (SEG) silicon layer on (001)Si inside 0.1-2 um oxide openings prepared by electron beam lithography.