摘要
In this study, we present a low thermal budget elevated-laser-liquid-phase-epitaxy technique designed for the precise fabrication of single-crystal islands (SCIs) intended for use in middle-end-of-line (MEOL) FinFETs. Each of these SCIs features a (100) orientation tended from Si seeding structure and is successfully integrated as channel materials in the MEOL circuit of a monolithic 3D IC (3DIC). This technique effectively mitigates the typical performance disparities associated with poly-Si channel materials in upper tiers, addressing a significant challenge in advanced electronic device fabrication and potentially enhancing the performance and reliability of MEOL FinFETs in monolithic 3DIC.